schottky barrier diode rb215t-60 ? applications ? dimensions (unit : mm) ? structure switching power supply ? features 1)cathode common type.(to-220) 2)low i r 3)high reliability ? construcion silicon epitaxal planar ? absolute maximum ratings (ta=25 ? c) symbol unit reverse voltage (repetitive peak) v rm v v r v average rectified forward current (*1) io a forward current surge peak (60hz/1cyc) (*1) i fsm a tj ? c tstg ? c ? elecrical characteristic (ta=25 ? c) symbol min. typ. max. unit forward voltage v f - - 0.58 v i f =10a reverse current i r - - 600 a v r =60v thermal impedance ? jc - - 1.75 ? c/w junction to case conditions parameter parameter limits 60 reverse voltage (dc) 60 20 (*1)business frequencies, rating of r-load, 1/2 io per diode, ta=116 ? c 100 junction temperature 150 storage temperature ? 40 to ? 150 (1) (2) (3) rohm : o220fn manufacture date 1.2 1.3 0.8 (1) (2) (3) 10.00.3 0.1 5.00.2 8.00.2 12.00.2 2.80.2 0.1 4.50.3 0.1 0.70.1 0.05 2.60.5 13.5min 8.0 15.00.4 0.2 1/3 2011.04 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb215t-60 ? electrical characteristics curves 0 5 10 15 20 25 30 ave:23.3ns ta=25 ? c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0.01 0.1 1 10 0 100 200 300 400 500 600 ta=150 ? c 0.1 1 10 100 1000 10000 100000 1000000 0 102030405060 ta=150 ? c ta=125 ? c ta=75 ? c ta=25 ? c ta=-25 ? c 1 10 100 1000 10000 0 5 10 15 20 25 30 f=1mhz 0 100 200 300 400 500 600 700 800 900 1000 ave:140.7ua 490 500 510 520 530 540 ave:515.0mv ta=25 ? c i f =10a n=30pcs 1 10 100 1000 11 01 0 0 8.3ms ifsm 1cyc 8.3ms 0 50 100 150 200 250 300 ave:166.0a 8.3ms ifsm 1cyc 10 100 1000 110100 t ifsm 0 10 20 30 0 10203040 dc d=1/2 sin( ? =180) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) forward voltage:v f (mv) v f -i f characteristics forward current:i f (a) reverse current:i r (ua) reverse voltage:v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (ua) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( ? c/w) forward power dissipation:pf(w) average rectified forward current:io(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) ta=25 ? c v r =30v n=30pcs ta=-25 ? c ta=125 ? c ta=75 ? c ta=25 ? c 1500 1600 1700 1800 1900 2000 ave:1704.1pf ta=25 ? c f=1mhz v r =0v n=10pcs 1ms im=100ma i f =5a 300us time mounted on epoxy board i fsm dispersion map 2/3 2011.04 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb215t-60 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? ave:7.50kv 0 5 10 15 0 102030405060 dc d=1/2 sin( ? =180) 0 10 20 30 40 50 0 25 50 75 100 125 150 0 10 20 30 40 50 0 25 50 75 100 125 150 reverse power dissipation:p r (w) reverse voltage:v r (v) v r -p r characteristics ambient temperature:ta( ? c) derating curve"(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ? c) derating curve"(io-tc) t tj=150 ? c d=t/t t v r io v r =30v 0a 0v dc d=1/2 sin( ? =180) dc d=1/2 sin( ? =180) electrostatic discharge test esd(kv) esd dispersion map t tj=150 ? c d=t/t t v r io v r =30v 0a 0v 3/3 2011.04 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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